Invention Grant
US07902527B2 Apparatus and methods for ion beam implantation using ribbon and spot beams
有权
使用色带和点光束进行离子束注入的设备和方法
- Patent Title: Apparatus and methods for ion beam implantation using ribbon and spot beams
- Patent Title (中): 使用色带和点光束进行离子束注入的设备和方法
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Application No.: US12194515Application Date: 2008-08-19
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Publication No.: US07902527B2Publication Date: 2011-03-08
- Inventor: Jiong Chen , Nicholas R. White
- Applicant: Jiong Chen , Nicholas R. White
- Agency: Sawyer Law Group, P.C.
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/28 ; G21K1/00

Abstract:
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.
Public/Granted literature
- US20090189096A1 APPARATUS AND METHODS FOR ION BEAM IMPLANTATION USING RIBBON AND SPOT BEAMS Public/Granted day:2009-07-30
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