Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US12195580Application Date: 2008-08-21
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Publication No.: US07902565B2Publication Date: 2011-03-08
- Inventor: Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
- Applicant: Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2007-215597 20070822
- Main IPC: H01L51/40
- IPC: H01L51/40

Abstract:
A semiconductor light emitting device includes: a laminated body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the laminated body and connected to the first semiconductor layer; and a second electrode provided on the first major surface of the laminated body and connected to the second semiconductor layer. The first electrode includes: a first region provided on the first semiconductor layer and including a first metal film; and a second region provided on the first semiconductor layer and including a second metal film, the second metal film having a higher reflectivity for light emitted from the light emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film.
Public/Granted literature
- US20090057707A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2009-03-05
Information query
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