发明授权
- 专利标题: RFID device having nonvolatile ferroelectric memory device
- 专利标题(中): 具有非易失性铁电存储装置的RFID装置
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申请号: US12178452申请日: 2008-07-23
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公开(公告)号: US07902963B2公开(公告)日: 2011-03-08
- 发明人: Hee Bok Kang , Jin Hong Ahn
- 申请人: Hee Bok Kang , Jin Hong Ahn
- 申请人地址: KR Icheon-si
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Icheon-si
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 优先权: KR10-2005-0065786 20050720
- 主分类号: H04Q5/22
- IPC分类号: H04Q5/22
摘要:
A RFID device has a nonvolatile ferroelectric memory including a memory cell array area supplied only with a high voltage and a peripheral area supplied with a low voltage, thereby reducing power consumption. The RFID device includes an antenna adapted and configured to transceive a radio frequency signal from an external communication apparatus, an analog block adapted and configured to generate a power voltage in response to the radio frequency signal received from the antenna, a digital block adapted and configured to receive the power voltage from the analog block, transmit a response signal to the analog block and output a memory control signal, and a memory adapted and configured to generate a high voltage with the power voltage and access data in response to the memory control signal.
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