发明授权
- 专利标题： Pixel structure and exposure method thereof
- 专利标题（中）： 像素结构及其曝光方法
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申请号： US11778855申请日： 2007-07-17
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公开(公告)号： US07903185B2公开(公告)日： 2011-03-08
- 发明人: Po-Sheng Shih , Seok-Lyul Lee
- 申请人： Po-Sheng Shih , Seok-Lyul Lee
- 申请人地址： TW Tao-Yuan Hsien
- 专利权人： Hannstar Display Corporation
- 当前专利权人： Hannstar Display Corporation
- 当前专利权人地址： TW Tao-Yuan Hsien
- 代理机构： Thomas, Kayden, Horstemeyer & Risley, LLP
- 优先权： TW93100282A 20040106
- 主分类号： G02F1/1343
- IPC分类号： G02F1/1343 ; G02F1/136 ; G02F1/13
摘要：
The present invention provides a pixel structure and exposure method thereof. This present invention divides these devices that influence the optical characteristic of the pixel region into two parts. Each part is located in a sub-pixel region of the pixel region. Different photolithography process rounds are performed in the different sub-pixel regions.
公开/授权文献
- US20080013006A1 Pixel Structure and Exposure Method Thereof 公开/授权日：2008-01-17
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