发明授权
US07904788B2 Methods of varying read threshold voltage in nonvolatile memory
有权
在非易失性存储器中改变读取阈值电压的方法
- 专利标题： Methods of varying read threshold voltage in nonvolatile memory
- 专利标题（中）： 在非易失性存储器中改变读取阈值电压的方法
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申请号： US11556615申请日： 2006-11-03
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公开(公告)号： US07904788B2公开(公告)日： 2011-03-08
- 发明人: Yigal Brandman , Kevin M. Conley
- 申请人： Yigal Brandman , Kevin M. Conley
- 申请人地址： US CA Milpitas
- 专利权人： SanDisk Corporation
- 当前专利权人： SanDisk Corporation
- 当前专利权人地址： US CA Milpitas
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H03M13/00
- IPC分类号： H03M13/00
摘要：
Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mapped to sub-ranges that are made wider, reducing errors.
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