发明授权
US07905958B2 Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device
有权
III族氮化物半导体晶体及其制造方法以及III族氮化物半导体器件
- 专利标题： Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device
- 专利标题（中）： III族氮化物半导体晶体及其制造方法以及III族氮化物半导体器件
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申请号： US11579645申请日： 2005-03-30
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公开(公告)号： US07905958B2公开(公告)日： 2011-03-15
- 发明人: Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
- 申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
- 申请人地址： JP Osaka JP Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.,Yusuke Mori
- 当前专利权人： Sumitomo Electric Industries, Ltd.,Yusuke Mori
- 当前专利权人地址： JP Osaka JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2004-148923 20040519
- 国际申请： PCT/JP2005/006076 WO 20050330
- 国际公布： WO2005/111278 WO 20051124
- 主分类号： C30B21/02
- IPC分类号： C30B21/02
摘要：
A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
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