Invention Grant
- Patent Title: Vapor deposited film by plasma CVD method
- Patent Title (中): 通过等离子体CVD法的气相沉积膜
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Application No.: US11884772Application Date: 2006-02-07
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Publication No.: US07906217B2Publication Date: 2011-03-15
- Inventor: Hajime Inagaki , Toshihide Ieki , Satoru Kitou , Ryuta Nakano , Megumi Nakayama
- Applicant: Hajime Inagaki , Toshihide Ieki , Satoru Kitou , Ryuta Nakano , Megumi Nakayama
- Applicant Address: JP Tokyo
- Assignee: Toyo Seikan Kaisha, Ltd.
- Current Assignee: Toyo Seikan Kaisha, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2005-045015 20050222; JP2005-137982 20050511
- International Application: PCT/JP2006/302426 WO 20060207
- International Announcement: WO2006/090602 WO 20060831
- Main IPC: B32B1/08
- IPC: B32B1/08 ; B32B7/00 ; B32B9/00 ; B32B18/00 ; B32B33/00

Abstract:
A vapor deposited film is formed on a base material surface by a plasma CVD method where an organic metal compound and an oxidizing gas are used as a reactive gas. The vapor deposited film has three sections of a base material side adhesive layer having 5% or more carbon, a barrier intermediate layer having less than 5% carbon, and a surface protection film having 5% or more carbon, by element concentration with respect to the total amount of three elements of a metal element (M), oxygen (O) and carbon (C) derived from the organic metal compound. The vapor deposited film has excellent adhesiveness to the base material, and has excellent resistance to water, especially to alkaline aqueous solutions, as well.
Public/Granted literature
- US20090148633A1 Vapor Deposited Film by Plasma Cvd Method Public/Granted day:2009-06-11
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