Invention Grant
- Patent Title: Core voltage discharger and semiconductor memory device with the same
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Application No.: US12005506Application Date: 2007-12-26
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Publication No.: US07907462B2Publication Date: 2011-03-15
- Inventor: Sang-Jin Byeon
- Applicant: Sang-Jin Byeon
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2007-0087096 20070829
- Main IPC: G11C7/04
- IPC: G11C7/04 ; G11C5/14
Abstract:
A core voltage discharger is capable of adjusting an amount of a current discharged according to temperature. The discharger for decreasing a level of a predetermined voltage receives temperature information from an on die thermal sensor and discharges a different amount of current in response to the temperature information.
Public/Granted literature
- US20090059701A1 Core voltage discharger and semiconductor memory device with the same Public/Granted day:2009-03-05
Information query
