发明授权
- 专利标题： Semiconductor device and active matrix display device
- 专利标题（中）： 半导体器件和有源矩阵显示器件
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申请号： US11741193申请日： 2007-04-27
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公开(公告)号： US07910053B2公开(公告)日： 2011-03-22
- 发明人: Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Kazumasa Kawase
- 申请人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Kazumasa Kawase
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-146724 20060526
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.
公开/授权文献
- US20070284742A1 SEMICONDUCTOR DEVICE AND ACTIVE MATRIX DISPLAY DEVICE 公开/授权日：2007-12-13
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