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发明授权
US07910388B2 Semiconductor light-emitting device with selectively formed buffer layer on substrate 有权
在衬底上具有选择性形成的缓冲层的半导体发光器件

Semiconductor light-emitting device with selectively formed buffer layer on substrate
摘要：
The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a multi-layer structure, and an ohmic electrode structure. The buffer layer is selectively formed on an upper surface of the substrate such that the upper surface of the substrate is partially exposed. The multi-layer structure is formed to overlay the buffer layer and the exposed upper surface of the substrate. The multi-layer structure includes a light-emitting region. The buffer layer assists a bottom-most layer of the multi-layer structure in lateral and vertical epitaxial growth. The ohmic electrode structure is formed on the multi-layer structure.
摘要（中）：

本发明公开了一种半导体发光器件及其制造方法。 根据本发明的半导体发光器件包括衬底，缓冲层，多层结构和欧姆电极结构。 缓冲层选择性地形成在衬底的上表面上，使得衬底的上表面部分露出。 形成多层结构以覆盖缓冲层和暴露的衬底的上表面。 多层结构包括发光区域。 缓冲层在横向和垂直外延生长中辅助多层结构的最底层。 欧姆电极结构形成在多层结构上。

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