发明授权
- 专利标题： Phase-change memory cell and method of fabricating the phase-change memory cell
- 专利标题（中）： 相变存储单元和相变存储单元的制造方法
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申请号： US12276905申请日： 2008-11-24
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公开(公告)号： US07910910B2公开(公告)日： 2011-03-22
- 发明人: Jonathan Zanhung Sun , Simone Raoux , Hemantha Wickramasinghe
- 申请人： Jonathan Zanhung Sun , Simone Raoux , Hemantha Wickramasinghe
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： McGinn IP Law Group, PLLC
- 代理商 Stephen C. Kaufman, Esq.
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/00
摘要：
A memory cell (and method of fabricating the memory cell) includes a stencil layer having a first opening, a phase-change material layer formed on a first electrode layer, and an electrically conductive layer formed on the first electrode layer, the electrically conductive layer having a pillar-shaped portion which is formed on the phase-change material layer and fills the first opening.
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