发明授权
- 专利标题： Semiconductor memory and method for manufacturing the same
- 专利标题（中）： 半导体存储器及其制造方法
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申请号： US12018486申请日： 2008-01-23
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公开(公告)号： US07910914B2公开(公告)日： 2011-03-22
- 发明人: Hiroyasu Tanaka , Ryota Katsumata , Hideaki Aochi , Masaru Kidoh , Masaru Kito , Mitsuru Sato
- 申请人： Hiroyasu Tanaka , Ryota Katsumata , Hideaki Aochi , Masaru Kidoh , Masaru Kito , Mitsuru Sato
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland Maier & Neustadt, L.L.P.
- 优先权： JP2007-013163 20070123
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a plurality of memory devices each having: a resistance change element, and a diode connected serially to the resistance change element; and a source conductive layer spreading two-dimensionally to be connected to one ends of the plurality of memory devices.
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