- 专利标题： Semiconductor storage element and manufacturing method thereof
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申请号： US11947428申请日： 2007-11-29
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公开(公告)号： US07910977B2公开(公告)日： 2011-03-22
- 发明人: Kenji Kawabata
- 申请人： Kenji Kawabata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2006-324445 20061130
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A semiconductor storage element includes: a semiconductor layer constituted of a line pattern with a predetermined width formed on a substrate; a quantum dot forming an electric charge storage layer formed on the semiconductor layer through a first insulating film serving as a tunnel insulating film; an impurity diffusion layer formed in a surface layer of the semiconductor layer so as to sandwich the quantum dot therebetween; and a control electrode formed on the quantum dot through a second insulating film.
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