发明授权
- 专利标题： Semiconductor device and method of fabricating the semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12081740申请日： 2008-04-21
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公开(公告)号： US07911047B2公开(公告)日： 2011-03-22
- 发明人: Hidenori Hasegawa , Norio Takahashi
- 申请人： Hidenori Hasegawa , Norio Takahashi
- 申请人地址： JP Tokyo
- 专利权人： Oki Semiconductor Co., Ltd.
- 当前专利权人： Oki Semiconductor Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Rabin & Berdo, PC
- 优先权： JP2007-119773 20070427
- 主分类号： H01L23/49
- IPC分类号： H01L23/49 ; H01L21/56
摘要：
A semiconductor device includes: a package substrate that includes a recessed portion, with electrode pads that are electrically connected to electrodes of the semiconductor chip being formed inside the recessed portion; a semiconductor chip that is housed in the recessed portion; terminal-use wires that are formed on the surface of the package substrate and are electrically connected to the electrode pads; external connection pads that are formed on a back surface of the package substrate and are electrically connected to the electrode pads; a sealing resin portion that includes a grinded surface that is parallel to the surface of the package substrate, and seals at least the semiconductor chip by a sealing resin; rewiring pads that are formed on the grinded surface; and connecting wires that are formed on the grinded surface and electrically interconnect the terminal-use wires and the rewiring pads.
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