Invention Grant
- Patent Title: Surface acoustic wave device and method of fabricating the same
- Patent Title (中): 表面声波装置及其制造方法
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Application No.: US12410131Application Date: 2009-03-24
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Publication No.: US07911116B2Publication Date: 2011-03-22
- Inventor: Shunichi Aikawa , Masayuki Kitajima , Keiji Tsuda
- Applicant: Shunichi Aikawa , Masayuki Kitajima , Keiji Tsuda
- Applicant Address: JP Tokyo
- Assignee: Taiyo Yuden Co., Ltd.
- Current Assignee: Taiyo Yuden Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Arent Fox LLP
- Priority: JP2008-074885 20080324
- Main IPC: H03H9/25
- IPC: H03H9/25 ; H01L41/22

Abstract:
A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) formed on the piezoelectric substrate, an interconnection electrode that is provided on the piezoelectric substrate and is connected to the IDT, the IDT being made of a metal identical to that of the IDT, an inorganic insulation layer that is provided on the piezoelectric substrate so that at least the interconnection electrode is exposed, an insulative resin layer that is located on an interface between the inorganic insulation layer and a portion of the interconnection electrode exposed from the inorganic insulation layer and is formed so as to cover a side surface of the interconnection electrode, and a metal layer that is provided on the interconnection electrode and the insulative resin layer.
Public/Granted literature
- US20090236934A1 SURFACE ACOUSTIC WAVE DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-09-24
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