发明授权
- 专利标题： Controlling the thickness of wafers during the electroplating process
- 专利标题（中）： 控制电镀过程中晶圆的厚度
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申请号： US11292606申请日： 2005-12-01
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公开(公告)号： US07914657B2公开(公告)日： 2011-03-29
- 发明人: Wai B. Fu , Hieu Lam , Shahram Y. Mehdizadeh , Yeak-Chong Wong
- 申请人： Wai B. Fu , Hieu Lam , Shahram Y. Mehdizadeh , Yeak-Chong Wong
- 申请人地址： NL Amsterdam
- 专利权人： Hitachi Global Storage Technologies, Netherlands B.V.
- 当前专利权人： Hitachi Global Storage Technologies, Netherlands B.V.
- 当前专利权人地址： NL Amsterdam
- 主分类号： C25D21/12
- IPC分类号： C25D21/12
摘要：
Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.