发明授权
- 专利标题: Photoelectric conversion device and method of producing the same
- 专利标题(中): 光电转换装置及其制造方法
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申请号: US11970043申请日: 2008-01-07
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公开(公告)号: US07915612B2公开(公告)日: 2011-03-29
- 发明人: Yoshiyuki Nasuno , Yasuaki Ishikawa , Takanori Nakano
- 申请人: Yoshiyuki Nasuno , Yasuaki Ishikawa , Takanori Nakano
- 申请人地址: JP Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Osaka
- 代理机构: Nixon & Vanderhye P.C.
- 优先权: JP2007-018413 20070129
- 主分类号: H01L31/061
- IPC分类号: H01L31/061
摘要:
A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm−3.