发明授权
- 专利标题： Symmetric bidirectional silicon-controlled rectifier
- 专利标题（中）： 对称双向硅控整流器
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申请号： US12113912申请日： 2008-05-01
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公开(公告)号： US07915638B2公开(公告)日： 2011-03-29
- 发明人: Tang-Kuei Tseng , Che-Hao Chuang , Ryan Hsin-Chin Jiang , Ming-Dou Ker
- 申请人： Tang-Kuei Tseng , Che-Hao Chuang , Ryan Hsin-Chin Jiang , Ming-Dou Ker
- 申请人地址： TW Taipei County
- 专利权人： Amazing Microelectronic Corp.
- 当前专利权人： Amazing Microelectronic Corp.
- 当前专利权人地址： TW Taipei County
- 代理机构： Sinorica LLC
- 代理商 Ming Chow
- 优先权： TW96127914A 20070731
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
The present invention discloses a symmetric bidirectional silicon-controlled rectifier, which comprises: a substrate; a buried layer formed on the substrate; a first well, a middle region and a second well, which are sequentially formed on the buried layer side-by-side; a first semiconductor area and a second semiconductor area both formed inside the first well; a third semiconductor area formed in a junction between the first well and the middle region, wherein a first gate is formed over a region between the second and third semiconductor areas; a fourth semiconductor area and a fifth semiconductor area both formed inside the second well; a sixth semiconductor area formed in a junction between the second well and the middle region, wherein a second gate is formed over a region between the fifth and sixth semiconductor areas.
公开/授权文献
- US20090032838A1 SYMMETRIC BIDIRECTIONAL SILICON-CONTROLLED RECTIFIER 公开/授权日：2009-02-05
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