Invention Grant
- Patent Title: Pressure sensor including thermal selftest
- Patent Title (中): 压力传感器包括热敏感
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Application No.: US12364884Application Date: 2009-02-03
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Publication No.: US07918135B2Publication Date: 2011-04-05
- Inventor: Dirk Hammerschmidt
- Applicant: Dirk Hammerschmidt
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G01L9/12
- IPC: G01L9/12
Abstract:
A semiconductor device includes a diaphragm, a sensing element, and a circuit. The sensing element is configured to sense deflection of the diaphragm. The circuit is configured to heat the diaphragm to induce deflection of the diaphragm.
Public/Granted literature
- US20100192694A1 PRESSURE SENSOR INCLUDING THERMAL SELFTEST Public/Granted day:2010-08-05
Information query
