发明授权
- 专利标题： Aqueous solution for removing post-etch residue
- 专利标题（中）： 用于去除蚀刻后残留物的水溶液
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申请号： US10594767申请日： 2005-03-10
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公开(公告)号： US07919445B2公开(公告)日： 2011-04-05
- 发明人: Raimund Mellies
- 申请人： Raimund Mellies
- 申请人地址： DE Ludwigshafen
- 专利权人： BASF Aktiengesellschaft
- 当前专利权人： BASF Aktiengesellschaft
- 当前专利权人地址： DE Ludwigshafen
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： EP04007627 20040330
- 国际申请： PCT/EP2005/002511 WO 20050310
- 国际公布： WO2005/098920 WO 20051020
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
The present invention relates to a novel solution for the removal of post-etch residues having improved properties and to the use thereof in the production of semiconductors. The invention relates, in particular, to an aqueous solution having a reduced etching rate on metallisations and on surfaces which have to be freed from post-etch residues and particles during the semiconductor production process.
公开/授权文献
- US20070161243A1 Aqueous solution for removing post-etch residue 公开/授权日：2007-07-12
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