发明授权
US07919860B2 Semiconductor device having wafer level chip scale packaging substrate decoupling
有权
具有晶圆级芯片级封装衬底去耦的半导体器件
- 专利标题： Semiconductor device having wafer level chip scale packaging substrate decoupling
- 专利标题（中）： 具有晶圆级芯片级封装衬底去耦的半导体器件
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申请号： US12048294申请日： 2008-03-14
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公开(公告)号： US07919860B2公开(公告)日： 2011-04-05
- 发明人: Rajen M. Murugan , Robert F. McCarthy , Baher S. Haroun , Peter R. Harper
- 申请人： Rajen M. Murugan , Robert F. McCarthy , Baher S. Haroun , Peter R. Harper
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Yingsheng Tung; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
One aspect of the invention provides a semiconductor device that includes a microchip having an outermost surface. First and second bond pads are located on the microchip and near the outermost surface. A first UBM contact is located on the outermost surface and between the first and second bond pads. The first UBM contact is offset from the first bond pad. A second UBM contact is located on the outermost surface and between the first and second bond pads. The second UBM contact is offset from the second bond pad, and a capacitor supported by the microchip is located between the first and second UBM contacts.