- 专利标题： Semiconductor device having resistance based memory array, method of reading, and systems associated therewith
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申请号： US12292897申请日： 2008-11-28
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公开(公告)号： US07920432B2公开(公告)日： 2011-04-05
- 发明人: Kwang Jin Lee , Du Eung Kim , Yong Jun Lee
- 申请人： Kwang Jin Lee , Du Eung Kim , Yong Jun Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce
- 优先权： KR10-2008-0034751 20080415
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
One embodiment includes a non-volatile memory cell array, and a read unit configured to disable read operation for the non-volatile memory cell array for a time period following writing of data in the non-volatile memory cell array.
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