Invention Grant
US07923265B2 Method and system for improving critical dimension proximity control of patterns on a mask or wafer
有权
用于改善掩模或晶片上图案的临界尺寸接近度控制的方法和系统
- Patent Title: Method and system for improving critical dimension proximity control of patterns on a mask or wafer
- Patent Title (中): 用于改善掩模或晶片上图案的临界尺寸接近度控制的方法和系统
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Application No.: US11688141Application Date: 2007-03-19
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Publication No.: US07923265B2Publication Date: 2011-04-12
- Inventor: Cheng-Ming Lin , Jen-His Chiu
- Applicant: Cheng-Ming Lin , Jen-His Chiu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for improving critical dimension uniformity of a substrate is provided. An equation based on a proximity trend of a pattern on a first substrate is determined. The equation is applied in a regression model to determine a parameter value of a second substrate. A recipe of an exposure equipment is adjusted based on the parameter value for exposure of the second substrate. Also, a system for controlling critical dimension of a pattern on a substrate is provided. The system includes an advance process control system for collecting exposure data of the substrate, and a regression model within the advance process control system for analyzing the exposure data and determining a parameter value of a recipe of the exposure tool. The regression model is operable to determine an equation based on a proximity trend of the substrate.
Public/Granted literature
- US20080124826A1 Method and System for Improving Critical Dimension Proximity Control of Patterns on a Mask or Wafer Public/Granted day:2008-05-29
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