Invention Grant
US07923368B2 Junction formation on wafer substrates using group IV nanoparticles
有权
使用IV族纳米粒子在晶片衬底上形成结
- Patent Title: Junction formation on wafer substrates using group IV nanoparticles
- Patent Title (中): 使用IV族纳米粒子在晶片衬底上形成结
-
Application No.: US12109684Application Date: 2008-04-25
-
Publication No.: US07923368B2Publication Date: 2011-04-12
- Inventor: Mason Terry , Homer Antoniadis , Dmitry Poplavskyy , Maxim Kelman
- Applicant: Mason Terry , Homer Antoniadis , Dmitry Poplavskyy , Maxim Kelman
- Applicant Address: US CA Sunnyvale
- Assignee: Innovalight, Inc.
- Current Assignee: Innovalight, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Foley & Lardner LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.
Public/Granted literature
- US20090269913A1 JUNCTION FORMATION ON WAFER SUBSTRATES USING GROUP IV NANOPARTICLES Public/Granted day:2009-10-29
Information query
IPC分类: