发明授权
- 专利标题： Memory device and method of fabricating the same
- 专利标题（中）： 存储器件及其制造方法
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申请号： US12140064申请日： 2008-06-16
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公开(公告)号： US07923770B2公开(公告)日： 2011-04-12
- 发明人: Chih-Lin Chen , Kuang-Wen Liu , Hsin-Huei Chen
- 申请人： Chih-Lin Chen , Kuang-Wen Liu , Hsin-Huei Chen
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX International Co., Ltd.
- 当前专利权人： MACRONIX International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 优先权： TW96147210A 20071211
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A method of fabricating memory devices is provided. First, a charge storage structure including a gate dielectric structure is formed on the substrate in sequence to form a charge trapping layer. Then, a gate conductive layer is formed above the charge storage structure. Afterwards, the gate conductive layer and at least a part of the charge storage structure are patterned. The cross section of the patterned charge storage structure is then become a trapezoid or a trapezoid analogue, which has the shorter side near the gate conductive layer and the longer side near the substrate.
公开/授权文献
- US20090146266A1 MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日：2009-06-11
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