Invention Grant
US07923790B1 Planar microshells for vacuum encapsulated devices and damascene method of manufacture
有权
用于真空封装装置的平面微壳和大马士革制造方法
- Patent Title: Planar microshells for vacuum encapsulated devices and damascene method of manufacture
- Patent Title (中): 用于真空封装装置的平面微壳和大马士革制造方法
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Application No.: US11716070Application Date: 2007-03-09
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Publication No.: US07923790B1Publication Date: 2011-04-12
- Inventor: Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
- Applicant: Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: O'Keefe, Egan, Peterman & Enders LLP
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.
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