发明授权
US07923838B2 Method and structure for reducing contact resistance between silicide contact and overlying metallization
有权
用于降低硅化物接触和上覆金属化之间的接触电阻的方法和结构
- 专利标题： Method and structure for reducing contact resistance between silicide contact and overlying metallization
- 专利标题（中）： 用于降低硅化物接触和上覆金属化之间的接触电阻的方法和结构
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申请号： US12122984申请日： 2008-05-19
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公开(公告)号： US07923838B2公开(公告)日： 2011-04-12
- 发明人: Christian Lavoie , Conal E. Murray , Kenneth P. Rodbell
- 申请人： Christian Lavoie , Conal E. Murray , Kenneth P. Rodbell
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
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