发明授权
US07924616B2 Word line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same
有权
用于非易失性存储器件和存储器件的字线升压系统和方法以及使用它的基于处理器的系统
- 专利标题： Word line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same
- 专利标题（中）： 用于非易失性存储器件和存储器件的字线升压系统和方法以及使用它的基于处理器的系统
-
申请号： US11795357申请日： 2007-05-04
-
公开(公告)号： US07924616B2公开(公告)日： 2011-04-12
- 发明人: Violante Moschiano , Giovanni Santin , Ercole di Iorio
- 申请人： Violante Moschiano , Giovanni Santin , Ercole di Iorio
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dorsey & Whitney LLP
- 国际申请： PCT/US2007/068220 WO 20070504
- 国际公布： WO2008/136826 WO 20081113
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
公开/授权文献
信息查询
