Invention Grant
- Patent Title: Method of programming non-volatile memory device
- Patent Title (中): 非易失性存储器件编程方法
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Application No.: US12240638Application Date: 2008-09-29
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Publication No.: US07924618B2Publication Date: 2011-04-12
- Inventor: Hee Youl Lee
- Applicant: Hee Youl Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-0138679 20071227; KR10-2008-0031161 20080403
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A programming method of a non-volatile memory device may include providing a memory device in which a first word line is preprogrammed in an erase operation of a memory block, pre-programming a second word line according to a program command, and programming the first word line.
Public/Granted literature
- US20090168538A1 Method of Programming Non-Volatile Memory Device Public/Granted day:2009-07-02
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