发明授权
US07928536B2 Roughness reducing film at interface, materials for forming roughness reducing film at interface, wiring layer and semiconductor device using the same, and method for manufacturing semiconductor device
有权
界面处的粗糙度降低膜，用于在界面处形成粗糙度降低膜的材料，布线层和使用其的半导体器件，以及用于制造半导体器件的方法
- 专利标题： Roughness reducing film at interface, materials for forming roughness reducing film at interface, wiring layer and semiconductor device using the same, and method for manufacturing semiconductor device
- 专利标题（中）： 界面处的粗糙度降低膜，用于在界面处形成粗糙度降低膜的材料，布线层和使用其的半导体器件，以及用于制造半导体器件的方法
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申请号： US11727001申请日： 2007-03-23
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公开(公告)号： US07928536B2公开(公告)日： 2011-04-19
- 发明人: Tadahiro Imada , Yoshihiro Nakata , Ei Yano
- 申请人： Tadahiro Imada , Yoshihiro Nakata , Ei Yano
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2006-091549 20060329; JP2006-349409 20061226
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
Techniques for obtaining a wiring layer with a high TDDB resistance and little leakage current, and accordingly, for manufacturing a highly reliable semiconductor device with a small electric power consumption are provided, in which an interfacial roughness reducing film is formed which is in contact with an insulator film and also in contact with a wiring line on the other side surface thereof, and has an interfacial roughness between the wiring line and the interfacial roughness reducing film smaller than that between the insulator film and the interfacial roughness reducing film.
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