Invention Grant
- Patent Title: Internal voltage generation device
- Patent Title (中): 内部电压发生装置
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Application No.: US11823182Application Date: 2007-06-27
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Publication No.: US07928798B2Publication Date: 2011-04-19
- Inventor: Jong Won Lee
- Applicant: Jong Won Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2006-0138796 20061229
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02
Abstract:
An internal voltage generation device is disclosed which includes an internal voltage generator operated in response to an enable signal, the internal voltage generator generating an internal voltage using a reference voltage, and a sub-voltage generator for driving an output terminal of the internal voltage generator to a predetermined voltage level in response to a control signal.
Public/Granted literature
- US20080157856A1 Internal voltage generation device Public/Granted day:2008-07-03
Information query
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