发明授权
- 专利标题： Integrated circuit having a plurality of MOSFET devices
- 专利标题（中）： 具有多个MOSFET器件的集成电路
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申请号： US11617552申请日： 2006-12-28
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公开(公告)号： US07932178B2公开(公告)日： 2011-04-26
- 发明人: Lee Wee Teo , Yong Meng Lee , Jeffrey Chee , Shyue Seng Tan , Chung Woh Lai , Johnny Widodo , Zhao Lun , Shailendra Mishra
- 申请人： Lee Wee Teo , Yong Meng Lee , Jeffrey Chee , Shyue Seng Tan , Chung Woh Lai , Johnny Widodo , Zhao Lun , Shailendra Mishra
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method is provided for manufacturing an integrated circuit having a plurality of MOSFET devices, comprising the steps of: providing a plurality of MOSFET devices each having a first and a second structural parameter associated therewith, wherein a value of one of the first and a second structural parameter of each device is selected to provide a value of a performance parameter of the device substantially equal to a predetermined reference value, the predetermined reference value being the same for each device.
公开/授权文献
- US20080157223A1 INTEGRATED CIRCUIT HAVING A PLURALITY OF MOSFET DEVICES 公开/授权日：2008-07-03
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