- 专利标题: Method of thinning a semiconductor substrate
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申请号: US12909494申请日: 2010-10-21
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公开(公告)号: US07932614B2公开(公告)日: 2011-04-26
- 发明人: Steven R. Codding , Timothy C. Krywanczyk , Timothy E. Neary , Edmund J. Sprogis
- 申请人: Steven R. Codding , Timothy C. Krywanczyk , Timothy E. Neary , Edmund J. Sprogis
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Richard M. Kotulak, Esq.
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.
公开/授权文献
- US20110031620A1 METHOD OF THINNING A SEMICONDUCTOR SUBSTRATE 公开/授权日:2011-02-10