- 专利标题： F-RAM device with current mirror sense amp
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申请号： US12362972申请日： 2009-01-30
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公开(公告)号： US07933138B2公开(公告)日： 2011-04-26
- 发明人: Hugh P. McAdams , Scott R. Summerfelt
- 申请人： Hugh P. McAdams , Scott R. Summerfelt
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： G11C11/22
- IPC分类号： G11C11/22
摘要：
A F-RAM memory device containing a current mirror sense amp. A F-RAM memory device containing a current mirror sense amp coupled to a negative voltage generator. A method of reading data from and restoring data back into F-RAM cells in a 2T2C F-RAM device containing a current mirror sense amp. A method of reading data from and restoring data back into F-RAM cells in a 1T1C F-RAM device.
公开/授权文献
- US20100195368A1 F-RAM Device with Current Mirror Sense Amp 公开/授权日：2010-08-05
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