Invention Grant
- Patent Title: Method of producing a porous semiconductor film on a substrate
- Patent Title (中): 在基板上制造多孔半导体膜的方法
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Application No.: US11578676Application Date: 2005-01-17
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Publication No.: US07935263B2Publication Date: 2011-05-03
- Inventor: Michael Duerr , Andreas Schmid , Gabriele Nelles , Akio Yasuda
- Applicant: Michael Duerr , Andreas Schmid , Gabriele Nelles , Akio Yasuda
- Applicant Address: DE Cologne
- Assignee: Sony Deutschland GmbH
- Current Assignee: Sony Deutschland GmbH
- Current Assignee Address: DE Cologne
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: EP04009742 20040423
- International Application: PCT/EP2005/000403 WO 20050117
- International Announcement: WO2005/104153 WO 20051103
- Main IPC: B29D11/00
- IPC: B29D11/00 ; B31D3/00
Abstract:
The invention relates to a method of producing a porous semiconductor film and the film resulting from such production. It furthermore relates to an electronic device incorporating such film and to potential uses of such film.
Public/Granted literature
- US20070209696A1 Method of Producing a Porous Semiconductor Film on a Substrate Public/Granted day:2007-09-13
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