发明授权
- 专利标题： Imprinting of partial fields at the edge of the wafer
- 专利标题（中）： 在晶片边缘印刷局部场
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申请号： US12479437申请日： 2009-06-05
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公开(公告)号： US07935292B2公开(公告)日： 2011-05-03
- 发明人: Sidlgata V. Sreenivasan , Byung-Jin Choi
- 申请人： Sidlgata V. Sreenivasan , Byung-Jin Choi
- 申请人地址： US TX Austin
- 专利权人： Molecular Imprints, Inc.
- 当前专利权人： Molecular Imprints, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： B29C59/02
- IPC分类号： B29C59/02
摘要：
Edge field patterning of a substrate having full fields and partial fields may include patterning using a template having multiple mesas with each mesa corresponding to a field on the substrate. Polymerizable material may be deposited solely between the template and the full fields of the substrate. A non-reactive material may be deposited between the template and partial fields of the substrate.
公开/授权文献
- US20090283934A1 Imprinting of Partial Fields at the Edge of the Wafer 公开/授权日：2009-11-19
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