发明授权
- 专利标题： Enhanced transistor performance by non-conformal stressed layers
- 专利标题（中）： 通过非保形应力层增强晶体管性能
-
申请号： US11682554申请日： 2007-03-06
-
公开(公告)号： US07935588B2公开(公告)日： 2011-05-03
- 发明人: Bruce B. Doris , Xiao Hu Liu
- 申请人： Bruce B. Doris , Xiao Hu Liu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 George Sai-Halasz; Louis J. Percello
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
NFET and PFET devices with separately strained channel regions, and methods of their fabrication is disclosed. A stressing layer overlays the device in a manner that the stressing layer is non-conformal with respect the gate. The non-conformality of the stressing layer increases the amount of stress that is imparted onto the channel of the device, in comparison to stressing layers which are conformal. The method for overlaying in a non-conformal manner includes non-conformal deposition techniques, as well as, conformal depositions where subsequently the layer is turned into a non-conformal one by etching.
公开/授权文献
信息查询
IPC分类:
