Invention Grant
- Patent Title: Reduced metal pipe formation in metal silicide contacts
- Patent Title (中): 减少金属硅化物接触中的金属管形成
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Application No.: US11935415Application Date: 2007-11-06
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Publication No.: US07935632B2Publication Date: 2011-05-03
- Inventor: Wei Hua Tong , Lap Chan , K. Suresh Kumar , Miow Chin Tan
- Applicant: Wei Hua Tong , Lap Chan , K. Suresh Kumar , Miow Chin Tan
- Applicant Address: SG Singapore
- Assignee: Chartered Semiconductor Manufacturing, Ltd.
- Current Assignee: Chartered Semiconductor Manufacturing, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte Ltd
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
Formation of metal pipes resulting from formation of metal silicide contacts are reduced or avoided. To reduce formation of metal pipes, an epitaxial layer is formed over the diffusion region on which the metal silicide contact is formed. The epitaxial layer reduces defects which enhances diffusion of metal atoms or molecules.
Public/Granted literature
- US20090114997A1 REDUCED METAL PIPE FORMATION IN METAL SILICIDE CONTACTS Public/Granted day:2009-05-07
Information query
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