Invention Grant
- Patent Title: Nano and MEMS power sources and methods thereof
- Patent Title (中): 纳米和MEMS电源及其方法
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Application No.: US11180841Application Date: 2005-07-13
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Publication No.: US07936019B2Publication Date: 2011-05-03
- Inventor: Ryne P. Raffaelle , David Wilt
- Applicant: Ryne P. Raffaelle , David Wilt
- Applicant Address: US NY Rochester US OH Cleveland
- Assignee: Rochester Institute of Technology,Glenn Research Center
- Current Assignee: Rochester Institute of Technology,Glenn Research Center
- Current Assignee Address: US NY Rochester US OH Cleveland
- Agency: LeClairRyan
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A power source and methods thereof includes a structure comprising one or more p type layers, one or more n type layers, and one or more intrinsic layers and at least one source of radiation is disposed on at least a portion of the structure. Each of the p type layers is separated from each of the n type layers by one of the intrinsic layers.
Public/Granted literature
- US20060017108A1 Nano and MEMS power sources and methods thereof Public/Granted day:2006-01-26
Information query
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