发明授权
- 专利标题： Photoelectric conversion element, solid-state image pickup device, and manufacturing method of the photoelectric conversion element
- 专利标题（中）： 光电转换元件，固态图像拾取器件以及光电转换元件的制造方法
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申请号： US12198370申请日： 2008-08-26
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公开(公告)号： US07936035B2公开(公告)日： 2011-05-03
- 发明人: Yoshiki Maehara , Takashi Goto , Kiyohiko Tsutsumi , Kyohei Ogawa , Takashi Komiyama , Takeshi Senga , Takehiro Kasahara
- 申请人： Yoshiki Maehara , Takashi Goto , Kiyohiko Tsutsumi , Kyohei Ogawa , Takashi Komiyama , Takeshi Senga , Takehiro Kasahara
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM Corporation
- 当前专利权人： FUJIFILM Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2007-220012 20070827
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less.
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