发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12485601申请日: 2009-06-16
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公开(公告)号: US07936061B2公开(公告)日: 2011-05-03
- 发明人: Yoshihiro Machida
- 申请人: Yoshihiro Machida
- 申请人地址: JP Nagano-shi
- 专利权人: Shinko Electric Industries Co., Ltd.
- 当前专利权人: Shinko Electric Industries Co., Ltd.
- 当前专利权人地址: JP Nagano-shi
- 代理机构: Rankin, Hill & Clark LLP
- 优先权: JP2008-158241 20080617
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A semiconductor device includes: a first insulating layer having an opening therethrough; a first wiring pattern disposed on the first insulating layer; an external connection terminal provided on a portion of the first wiring pattern exposed from the opening; a second insulating layer which covers the first wiring pattern and having via holes therethrough; a second wiring pattern disposed within the second insulating layer and electrically connected to the first wiring pattern via a conductive material filled in at least one of the via holes; a semiconductor element having an electrode thereon and mounted on the second insulating layer to be electrically connected to the first wiring pattern through the electrode disposed in at least one of the via holes; an underfill resin filled between the semiconductor element and the second insulating layer; and a sealing resin portion which seals the semiconductor element.
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