发明授权
- 专利标题： MRAM diode array and access method
- 专利标题（中）： MRAM二极管阵列和访问方式
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申请号： US12254414申请日： 2008-10-20
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公开(公告)号： US07936580B2公开(公告)日： 2011-05-03
- 发明人: Yiran Chen , Hai Li , Hongyue Liu , Yong Lu , Song S. Xue
- 申请人： Yiran Chen , Hai Li , Hongyue Liu , Yong Lu , Song S. Xue
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Campbell Nelson Whipps LLC
- 主分类号： G11C5/08
- IPC分类号： G11C5/08 ; G11C27/00 ; G11C11/00 ; G11C7/00
摘要：
A memory unit includes a magnetic tunnel junction data cell is electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a write current through the magnetic tunnel junction data cell. A first diode is electrically between the magnetic tunnel junction data cell and the source line and a second diode is electrically between the magnetic tunnel junction data cell and the source line. The first diode and second diode are in parallel electrical connection, and having opposing forward bias directions.
公开/授权文献
- US20100097852A1 MRAM DIODE ARRAY AND ACCESS METHOD 公开/授权日：2010-04-22
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