发明授权
- 专利标题： Non-volatile memory cell with non-ohmic selection layer
- 专利标题（中）： 具有非欧姆选择层的非易失性存储单元
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申请号： US12502222申请日： 2009-07-13
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公开(公告)号： US07936585B2公开(公告)日： 2011-05-03
- 发明人: Wei Tian , Insik Jin , Venugopalan Vaithyanathan , Haiwen Xi , Michael Xuefei Tang , Brian Lee
- 申请人： Wei Tian , Insik Jin , Venugopalan Vaithyanathan , Haiwen Xi , Michael Xuefei Tang , Brian Lee
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Fellers, Snider, et al.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.
公开/授权文献
- US20110007551A1 Non-Volatile Memory Cell with Non-Ohmic Selection Layer 公开/授权日：2011-01-13