Invention Grant
- Patent Title: Method of manufacturing low-temperature storage, and low-temperature storage
- Patent Title (中): 制造低温储存方法和低温储存
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Application No.: US12801067Application Date: 2010-05-20
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Publication No.: US07937958B2Publication Date: 2011-05-10
- Inventor: Hidetoshi Shinya , Yasushi Sakata
- Applicant: Hidetoshi Shinya , Yasushi Sakata
- Applicant Address: JP Moriguchi-shi
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Moriguchi-shi
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2005-298722 20051013
- Main IPC: F25B1/00
- IPC: F25B1/00

Abstract:
An object is to provide a method of manufacturing a low-temperature storage in which an insulating performance of an insulating box article is enhanced, and an amount of contents of an inner box can be enlarged. In the low-temperature storage comprising: the insulating box article constituted by placing a foamed insulating material between an outer box and the inner box; and a vacuum insulating panel disposed on the surface of the outer box on the side of the foamed insulating material, a thickness dimension of the foamed insulating material between the inner box and the vacuum insulating panel is set so that a temperature of the surface of the vacuum insulating panel on the side of the inner box is not less than a predetermined temperature.
Public/Granted literature
- US20100230423A1 Method of manufacturing low-temperature storage, and low-temperature storage Public/Granted day:2010-09-16
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