发明授权
- 专利标题： Semiconductor device manufacturing method
- 专利标题（中）： 半导体器件制造方法
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申请号： US12548838申请日： 2009-08-27
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公开(公告)号： US07939347B2公开(公告)日： 2011-05-10
- 发明人: Wensheng Wang
- 申请人： Wensheng Wang
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2008-219353 20080828
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84 ; H01L21/20
摘要：
A semiconductor device manufacturing method includes forming a first film made of a first metal to an upper portion of a substrate, forming a second film made of an amorphous metal oxide or an microcrystalline metal oxide on the first film, subjecting the second film to a heat treatment, subjecting the second film after the heat treatment to a reduction treatment, forming a third film made of a ferroelectric material on the second film, and forming a fourth film made of a second metal on the third film.
公开/授权文献
- US20100055805A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 公开/授权日：2010-03-04
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