Invention Grant
US07939402B1 Semiconductor apparatus comprising bipolar transistors and metal oxide semiconductor transistors and manufacturing method
有权
包括双极晶体管和金属氧化物半导体晶体管的半导体装置及其制造方法
- Patent Title: Semiconductor apparatus comprising bipolar transistors and metal oxide semiconductor transistors and manufacturing method
- Patent Title (中): 包括双极晶体管和金属氧化物半导体晶体管的半导体装置及其制造方法
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Application No.: US12653706Application Date: 2009-12-17
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Publication No.: US07939402B1Publication Date: 2011-05-10
- Inventor: Richard W. Foote , Robert Oliver
- Applicant: Richard W. Foote , Robert Oliver
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/96
- IPC: H01L29/96
Abstract:
A method for manufacturing a semiconductor apparatus is disclosed. The apparatus comprises double poly bipolar transistors and double poly metal oxide semiconductor (MOS) transistors. The bipolar transistors and the MOS transistors are manufactured in a unified process in which a first polysilicon layer (Poly1) is doped to form the extrinsic bases in the bipolar transistors and to form the gates in the MOS transistors. A second polysilicon layer (Poly2) is doped to form emitters in the bipolar transistors and to form the sources and drains in the MOS transistors. The method of the invention minimizes the number of manufacturing process steps.
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