发明授权
- 专利标题： Bipolar transistor and back-gated transistor structure and method
- 专利标题（中）： 双极晶体管和后栅晶体管结构及方法
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申请号： US12536636申请日： 2009-08-06
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公开(公告)号： US07939417B2公开(公告)日： 2011-05-10
- 发明人: Andres Bryant , William F. Clark, Jr. , Edward J. Nowak
- 申请人： Andres Bryant , William F. Clark, Jr. , Edward J. Nowak
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Hoffman Warnick LLC
- 代理商 Anthony J. Canale
- 主分类号： H01L21/331
- IPC分类号： H01L21/331
摘要：
A structure is disclosed including a substrate including an insulator layer on a bulk layer, and a bipolar transistor in a first region of the substrate, the bipolar transistor including at least a portion of an emitter region in the insulator layer. Another disclosed structure includes an inverted bipolar transistor in a first region of a substrate including an insulator layer on a bulk layer, the inverted bipolar transistor including an emitter region, and a back-gated transistor in a second region of the substrate, wherein a back-gate conductor of the back-gated transistor and at least a portion of the emitter region are in the same layer of material. A method of forming the structures including a bipolar transistor and back-gated transistor together is also disclosed.