Invention Grant
- Patent Title: Wafer bonding activated by ion implantation
- Patent Title (中): 通过离子注入激活的晶片键合
-
Application No.: US12212386Application Date: 2008-09-17
-
Publication No.: US07939424B2Publication Date: 2011-05-10
- Inventor: Yuri Erokhin , Paul Sullivan , Steven R. Walther , Peter Nunan
- Applicant: Yuri Erokhin , Paul Sullivan , Steven R. Walther , Peter Nunan
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.
Public/Granted literature
- US20090081848A1 WAFER BONDING ACTIVATED BY ION IMPLANTATION Public/Granted day:2009-03-26
Information query
IPC分类:
