发明授权
- 专利标题： High density via and metal interconnect structures, and methods of forming the same
- 专利标题（中）： 高密度通孔和金属互连结构及其形成方法
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申请号： US12049229申请日： 2008-03-14
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公开(公告)号： US07939445B1公开(公告)日： 2011-05-10
- 发明人: Pantas Sutardja , Albert Wu , Winston Lee , Peter Lee , Chien-Chuan Wei , Runzi Chang
- 申请人： Pantas Sutardja , Albert Wu , Winston Lee , Peter Lee , Chien-Chuan Wei , Runzi Chang
- 申请人地址： BM Hamilton
- 专利权人： Marvell International Ltd.
- 当前专利权人： Marvell International Ltd.
- 当前专利权人地址： BM Hamilton
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
Methods and structures for interconnects in semiconductor devices are described. A method of forming a mask pattern for a metal layer in an interconnect can include searching a layout for a metal feature with a predetermined size and an interconnect layer aligned thereto, removing the metal feature from the layout to form a modified layout, and reforming the mask pattern using the modified layout. The metal interconnect may include a first pattern of metal lines, each having a minimum feature size in a layout view in no more than one dimension; a dielectric layer on or over the first pattern of metal lines, having a substantially planar horizontal upper surface; and vias or contacts in the dielectric layer, the vias or contacts contacting a top surface of the first pattern of metal lines and a top surface of silicon structures, vias, or contacts below the first pattern of metal lines.
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