Invention Grant
- Patent Title: High output light emitting diode and method for fabricating the same
- Patent Title (中): 高输出发光二极管及其制造方法
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Application No.: US11318505Application Date: 2005-12-28
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Publication No.: US07939841B2Publication Date: 2011-05-10
- Inventor: Hyun Jae Lee , Jun Seok Ha
- Applicant: Hyun Jae Lee , Jun Seok Ha
- Applicant Address: KR Seoul
- Assignee: LG Electronics Inc.
- Current Assignee: LG Electronics Inc.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Priority: KR10-2004-0117766 20041231
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A high output light emitting diode (LED) and a method for fabricating the LED is disclosed. The LED includes a sidewall or surface that is inclined. A reflective film is formed on the inclined sidewall or surface to allow light to reflect from the reflective film and to emit the light upward or in a favorable direction with respect to the device, thereby being configured and enabled to improve a light output of the LED and dispense with an additional passivation process.
Public/Granted literature
- US20060145174A1 High output light emitting diode and method for fabricating the same Public/Granted day:2006-07-06
Information query
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